sur20100 thru sur20120 dim. a b c d e f g h j k l m n q milimeter min. max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 inches min. max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 dimensions to-220ac sur20100 v rsm v 1000 v rrm v 1000 a=anode, c=cathode, tab=cathode c a symbol test conditions maximum ratings unit i frms i favm i frm t vj =t vjm t c =85 o c; rectangular, d=0.5 t p <10us; rep. rating, pulse width limited by t vjm 70 17 220 a t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 130 140 110 120 a i fsm t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 85 80 60 60 a 2 s i 2 t t vj t vjm t stg -40...+150 150 -40...+150 o c p tot t c =25 o c m d mounting torque 78 0.4...0.6 2 w nm weight g sur20120 1200 1200 soft recovery behaviour ultra fast recovery epitaxial diodes c(tab) c a p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
sur20100 thru sur20120 advantages * high reliability circuit operation * low voltage peaks for reduced protection circuits * low noise switching * low losses * operating at lower temperature or space saving by reduced cooling applications * antiparallel diode for high frequency switching devices * anti saturation diode * snubber diode * free wheeling diode in converters and motor control circuits * rectifiers in switch mode power supplies (smps) * inductive heating and melting * uninterruptible power supplies (ups) * ultrasonic cleaners and welders features * international standard package * glass passivated chips * very short recovery time * extremely low losses at high switching frequencies * low i rm -values * soft recovery behaviour symbol test conditions characteristic values typ. max. unit t vj =25 o c; v r =v rrm t vj =25 o c; v r =0.8 . v rrm t vj =125 o c; v r =0.8 . v rrm 750 250 7 ua ua ma i r i f =12a; t vj =150 o c t vj =25 o c 1.87 2.15 v v f r thjc r thja 1.6 60 k/w v r =540v; i f =20a; -di f /dt=100a/us; l<0.05uh; t vj =100 o c t rr i f =1a; -di/dt=100a/us; v r =30v; t vj =25 o c ns i rm a 40 v to for power-loss calculations only 1.65 v r t 18.2 m t vj =t vjm 60 7 _ soft recovery behaviour ultra fast recovery epitaxial diodes * rohs compliant p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
sur20100 thru sur20120 f ig. 1 f orward current f ig. 2 r ecovery charge vers us -di f /dt. f ig. 3 p eak revers e current vers us vers us voltage drop. -di f /dt. f ig. 7 t rans ient thermal impedance junction to cas e. 1 1 0 100 1000 0 1 2 3 4 5 6 0 200 400 600 0 10 20 30 40 50 0 200 400 600 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 1.0 a/ s s 0 200 400 600 0 10 20 30 40 50 60 t v j =125 c i f =30 a -d i f /dt t fr v f r t fr ns 0 20 0 400 600 800 1000 1200 v v f r -d i f /d t t rr ty p . max . 0 4 0 8 0 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 q r i r m c t v j a ma x. ty p . -d i f /dt i r m -d i f /dt q r 0 123 4 0 10 20 30 40 50 60 70 v v f i f t v j =150 c t v j =100 c t v j = 25 c a i f =15a i f =30a i f =60a i f =30a v r = 540 v t v j =100 c max . ty p. i f =1 5a i f =3 0a i f =6 0a i f =3 0a t v j =1 00 c v r = 54 0v v r =540v t v j =100 c i f =15a i f =30a i f =60a i f =30a a/ s a/ s a/ s c k f f ig. 4 dynamic parameters vers us f ig. 5 r ecovery time vers us -di f /dt. f ig. 6 p eak forward voltage junction temperature. vers us di f /dt. soft recovery behaviour ultra fast recovery epitaxial diodes p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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